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Energy Band Structure of InAs with MedeA® -VASP

The energy band structure of InAs is computed with the HSE06 hybrid functional using MedeA-VASP. The calculations give a direct band gap of 0.35 eV, which coincides with the experimental value. The Γ-L separation in the lowest conduction band is computed to be 1.11 eV. Screened-exchange FLAPW calculations reported a value of 1.21 eV. The earlier handbook value was 0.74 eV. More recent experiments reported 1.1±0.05 eV, which is perfectly consistent with the present calculations.

Energy Band Structure of InAs with MedeA-VASP
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