Mathew D. Halls on Atomic Layer Deposition

Materials Design's senior scientist Mathew D. Halls, Ph.D. will be delivering an invited presentation in the plenary session for "First-Principles Calculations for ALD: Precursors, Processes, and Interfaces" at the 10th international conference on Atomic Layer Deposition (ALD 2010). The ALD 2010 conference will be held at the Seoul Education Culture Center, Seoul, Korea from June 20 to 23, 2010. Dr. Halls will present on June 21st.

In a presentation titled "Computational Spectroscopy for Atomic Layer Deposition,", Dr. Halls will provide an overview of the use of electronic structure methods to predict vibrational characteristics for chemical species implicated in the Atomic Layer Deposition (ALD) process. The ability to connect predicted and measured spectral features is important in lending support to theoretical predictions of surface structures, reaction energetics and mechanisms of ALD nucleation and growth reactions. For more information, visit: http://ald2010.snu.ac.kr

About ALD 2010

The AVS Topical Conference on Atomic Layer Deposition is an annual three-day meeting preceded by one day of tutorials. The conference is dedicated to the science and technology of atomic layer controlled deposition of thin films. ALD is used to fabricate ultrathin and conformal thin film structures for many semiconductor and thin film device applications.
A unique attribute of ALD is that it uses sequential self-limiting surface reactions to achieve control of film growth in the monolayer or sub-monolayer thickness regime. ALD is receiving attention for its potential applications in advanced high dielectric constant (high-k) gate oxides, storage capacitor dielectrics and copper diffusion barriers in advanced electronic devices, as well as for solar energy and biological applications. It is of interest for any advanced technologies that require control of film structure in the nanometer or sub-nanometer scale.