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Nanotunnels below SiC Surface
Nanostructuring a surface is a key and mandatory engineering step toward advances in nanotechnology. A team of French and Italian scientists and of a Franco-American company (Materials Design) has just shown that hydrogen/deuterium (H/D) induces the opening of nanotunnels below the surface of an advanced semiconductor, silicon carbide (SiC) such as resistance of high temperature, high thermal conductivity, biocompatibility, and radiation resistance.
These investigations have been performed using advanced experimental tools, namely synchrotron radiation at SOLEIL (France) and high-resolution electron energy loss spectroscopy for vibrational spectroscopy at the University of Genoa (Italy), and state-of-the-art theoretical simulations using VASP and Phonon within the MedeA®software environment. Depending on the H/D SiC surface, these nanotunnels undergo a sequence of semiconducting/metallic/semiconducting transitions. Such nanotunnels open very promising prospects toward applications in electronics, chemistry, storage, sensors and biotechnology.
and at Nature Communications
This article was selected as research highlight of 2013 at SOLEIL. Congratulations!
Publish while:2013 Dec 12 - 08 - 2014 Apr 12 - 08
News & Views
Erich Wimmer will give an invited talk at this year's MRS in Boston Nov 27-Dec 2, 2016
Our thoughts and prayers are with a valued colleague's family
This year's UGM was held in Seattle, Washington
Oct 12, 14 and 20, 2016.
Oct 4-6, 2016 - Seattle, WA
Aug 25 - Sep 9, 2016
Amorphous Materials Builder, HT Launchpad, VASPsol
Three different times on April 5th, 6th and 7th
Feb 23-24, San Jose, CA