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Physical Modeling – A New Paradigm in Device Simulation


Z. Stanojevic, O. Baumgartner, F. Mitterbauer, H. Demel, C. Kernstock, M. Karner, V. Eyert, A. France-Lanord, P. Saxe, C. Freeman, and E. Wimmer

2015 IEEE International Electron Devices Meeting (IEDM)

We go far beyond classical TCAD in and create a simulation framework that is ready for devices based on contemporary and future technology nodes. We do so by extending the common drift-diffusion-type device simulation framework with additional tools: (i) a k p-based subband structure tool, (ii) a deterministic subband Boltzmann transport solver, and (iii) a TCAD-compatible quantum transport solver, to capture every important aspect of device operation at the nano-scale. An atomistic ab-initio tool suite complements the framework providing material properties that would be hard to obtain otherwise. The capabilities of the approach are demonstrated on two different devices featuring non-planar geometry and alternative channel materials.

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