Modeling work function changes in CMOS stacks containing HfO₂ high-k dielectrics
The work function of the metal gate in a CMOS stack depends on the composition and structure of the interfaces. This is demonstrated here for the case of a Si-HfO2-W stack by introducing a Hf vacancy at the Si/HfO2 interface. At a concentration of 1.2 vacancies per nm2 the work functions is increased by 500 meV.
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