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  • Katherine Hollingsworth

Materials Design, Inc. and Texas Instruments

Materials Design, Inc. announces a joint presentation with University of Texas at Dallas, KAUST, and Texas Instruments at the 2010 Symposia on VLSI Technology and Circuits on June 17th in Honolulu, Hawaii.

The presentation will describe the results of a close collaboration including experiment and atomistic simulation, and illustrates the power of this complementarity in guiding the development of materials and processes for microelectronic applications.

“This is one more impressive example of how atomistic simulation can help resolve important industrial issues in fields such as microelectronics. At Materials Design, Inc. we are focused on delivering properties from simulation that are of direct value in the engineering process. It is pleasing to see these capabilities becoming an integral part of industrial R&D.” said Erich Wimmer, CEO of Materials Design, Inc.

Presentation Abstract

NMOS and PMOS band edge effective work function and correspondingly low Vt are demonstrated using standard fab materials and processes in a gate-last scheme employing low-temperature anneals and selective cladding layers. Al migration from the cladding to the TiN/HfO2 interface during FGA together with low O concentration in the TiN enables low NMOS Vt. The use of non-migrating W cladding along with N-induced dipoles, produced by increased oxygen in the TiN, facilitates low PMOS Vt.

About the Symposia

Professors Shoji Tanaka and Walter Kosonocky, founders of the Symposia, first organized the VLSI Technology Symposium in 1981 with the hope of offering an opportunity for world's top technologists to engage in an open exchange of ideas on what was quickly becoming a revolution in the world's industrial capability. Since then, the Symposium has been held annually and has grown to be an important and valuable event for people working in the VLSI business. The presentation of high-quality papers has made it possible for attendees to learn about new directions in the development of VLSI technology. To learn more visit: VLSI Symposium


Niki Frishman: +1 (505) 986-1023

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